The understanding of the switching procedure of an IGBT requires a more detailed descr iption. It is very similar to a MOSFET. The main difference occurs at turn-off when a current tail appears, see Figure 2.2 [5]. When turning on, a positive v

对最流行电路解决方案和他们的性能进行了分析，这包括寄生部分的影响、瞬态的和极限的工作情况。整篇文章开始于对MOSFET技术和开关工作的概述，随后进行简单的讨论然后再到复杂问题的分析。仔细描述了设计过程中关于接地和高边栅极驱动电路、AC耦合和变压器隔离的解决方案。其中一个章节专门来解决同步整流器应用中栅极驱动对MOSFET的要求。-The most popular circuit of the solutions and their performance is analyzed, includi