January 1988 MM54HC00/MM74HC00 Quad 2-Input NAND Gate General Descr iption These NAND gates utilize advanced silicon-gate CMOS technology to achieve operating speeds similar to LS-TTL gates with the low power consumption of standard CMOS

ADI BF561开发板之cmos驱动，包括a core和b core-ADI BF561 development board of cmos drive, including a core and b core

eepromSingle supply with programming operation down to 2.0V (Commercial only) • Low power CMOS technology - 1 mA active current typical - 5 m A standby current (typical) at 3.0V • ORG pin selectable memory configuration