用HF +HNO3 溶液蚀刻单晶硅表面,通过扫描电镜表征其形貌和厚度变化,研究了蚀刻液浓度、蚀刻时间及温度对单晶硅化学蚀刻行为的影响-Etched with HF+ HNO3 solution, silicon surfaces by scanning electron microscopy to characterize the morphology and thickness, the concentration of the etching solution, etching time a