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74HC116
- January 1988 MM54HC00/MM74HC00 Quad 2-Input NAND Gate General Descr iption These NAND gates utilize advanced silicon-gate CMOS technology to achieve operating speeds similar to LS-TTL gates with the low power consumption of standard CMOS
PartialDischarge
- 局部放电指数衰减信号产生程序，加噪声程序以及除噪声程序-Exponential decay of partial discharge signal generation program, plus noise process and procedures, inter-noise
xiaobo
- 基于小波变换的局部放电信号消噪技术研究，包括程序和参考文献。-Noise cancellation technology research partial discharge signal based on wavelet transform, including the program and reference papers.
xbfx
- 小波分析、局部放电试验所采集的信号中往往混有白噪声、周期干扰信号去除。此处采用常用db系列小波中的db6小波进行9尺度的多分辨分解后，根据白噪声能量特性，估算各尺度的阈值大小，采用硬值进行处理，后进行重构。-Wavelet Analysis、Signal acquired partial discharge test is often mixed with white noise, periodic interference signal removal. Db series wavelet c
wnoise_xiaobobao
- 小波包法去除放电信号中的白噪声，采用db4小波分解4层-Removal of wavelet packet discharge signal white noise, using four-layer wavelet decomposition db4