文件名称:hh
-
所属分类：
- 标签属性：
- 上传时间：2012-11-16
-
文件大小：268kb
-
已下载：0次
-
提 供 者：
-
相关连接：无下载说明：别用迅雷下载，失败请重下，重下不扣分！
介绍说明－－下载内容来自于网络，使用问题请自行百度
1.掌握存储器的设计目标和功能特点，熟悉SRAM2114的结构特点
2.利用SRAM2114和相关的基本电路设计8位地址的存储器电路
3.在TDN-CM+实验系统中，用SRAM2114 和门电路实现8位地址的存储器电路
4.以表格记录在学号加班号为起点的16个地址单元中，分别写入相应的反码
5．绘制带开关输入功能的存储器电路连接图，撰写相应的设计报告
-1. Master memory design goals and functional characteristics of the structural features of two familiar SRAM2114. SRAM2114 and the associated use of the basic circuit design of 8-bit address of the memory circuit 3. TDN-CM+ experimental system, and doors with SRAM2114 circuit 8-bit address of the memory circuit 4. in order to form to record the number of school to work overtime, No. 16 addresses as a starting point units, respectively, to write the corresponding anti-code 5. Drawing with switch input of the memory circuit connection diagram, write the corresponding design report
2.利用SRAM2114和相关的基本电路设计8位地址的存储器电路
3.在TDN-CM+实验系统中，用SRAM2114 和门电路实现8位地址的存储器电路
4.以表格记录在学号加班号为起点的16个地址单元中，分别写入相应的反码
5．绘制带开关输入功能的存储器电路连接图，撰写相应的设计报告
-1. Master memory design goals and functional characteristics of the structural features of two familiar SRAM2114. SRAM2114 and the associated use of the basic circuit design of 8-bit address of the memory circuit 3. TDN-CM+ experimental system, and doors with SRAM2114 circuit 8-bit address of the memory circuit 4. in order to form to record the number of school to work overtime, No. 16 addresses as a starting point units, respectively, to write the corresponding anti-code 5. Drawing with switch input of the memory circuit connection diagram, write the corresponding design report
(系统自动生成,下载前可以参看下载内容)
下载文件列表
本网站为编程资源及源代码搜集、介绍的搜索网站，版权归原作者所有！ 粤ICP备11031372号
1999-2046 搜珍网 All Rights Reserved.