IGBTs were first introduced as a combination of the bipolar junction transistor

(BJT) and the metal oxide semiconductor field effect transistor (MOSFET)

technology. The IGBT is to prefer in medium high voltage segments (600-

3000V) rather than theMOSFET because it proved to have several good features

like ruggedness and operation at higher frequencies [1, ch. 1.9]. The construction

of the IGBT combines the low conduction losses of a BJT with the advantage

of the short switching times of the MOSFET.