文件名称:NAND_FLASH_FACTORY_PROGRAM
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一、 概况
1. NAND 闪存的种类
2. NAND 闪存的框架
3. 非全页的编程(Partial Page Programming)
4. 从NAND 启动(Booting From NAND)
二、 NAND 闪存的可靠性问题
1. 坏块管理(Bad Block Management,BBM)
2. 坏块管理算法的规范 (BBM Algorithm Specification)
3. 6 个工厂编程的坏块管理的要素(Six BBM Factory Programming Elements)
1) 坏块的替换策略(Bad Block Replacement Strategy,BBR)
2) 分区(Partitioning)
3) 纠错码(Error Correction Codes ,ECC )
4) 备用区的使用(Spare Area Placement,SAP)
5) 未用好块的格式(Free Good Block Formatting)
6) 动态元数据(Dynamic Metadata)
4. 系统举例
5. 通用的工厂编程坏块管理方案(Universal Factory Programming BBM Scheme)
6. 第三方和客制化的坏块管理方案(Third-party and Custom BBM Schemes)
三、 对Managed NAND 编程(Programming Managed NAND)
四、 NAND 的序列号(Serializing NAND)
五、 结论-I. Overview
1. NAND type flash memory
2. NAND flash memory framework
3. Non-full-page programming (Partial Page Programming)
4. From the NAND boot (Booting From NAND)
Second, NAND flash memory reliability problems
1. Bad block management (Bad Block Management, BBM)
2. Bad block management algorithm specification (BBM Algorithm Specification)
3.6 factory-programmed elements of bad block management (Six BBM Factory Programming Elements)
1) bad block replacement policy (Bad Block Replacement Strategy, BBR)
2) partition (Partitioning)
3) error-correcting code (Error Correction Codes, ECC)
4) the use of spare area (Spare Area Placement, SAP)
5) the format is not good use of the block (Free Good Block Formatting)
6) The dynamic metadata (Dynamic Metadata)
4. System Example
5. GM s factory-programmed bad block management program (Universal Factory Programming BBM Scheme)
6. Third-party and custom bad block management program (Third-party and Custom BB
1. NAND 闪存的种类
2. NAND 闪存的框架
3. 非全页的编程(Partial Page Programming)
4. 从NAND 启动(Booting From NAND)
二、 NAND 闪存的可靠性问题
1. 坏块管理(Bad Block Management,BBM)
2. 坏块管理算法的规范 (BBM Algorithm Specification)
3. 6 个工厂编程的坏块管理的要素(Six BBM Factory Programming Elements)
1) 坏块的替换策略(Bad Block Replacement Strategy,BBR)
2) 分区(Partitioning)
3) 纠错码(Error Correction Codes ,ECC )
4) 备用区的使用(Spare Area Placement,SAP)
5) 未用好块的格式(Free Good Block Formatting)
6) 动态元数据(Dynamic Metadata)
4. 系统举例
5. 通用的工厂编程坏块管理方案(Universal Factory Programming BBM Scheme)
6. 第三方和客制化的坏块管理方案(Third-party and Custom BBM Schemes)
三、 对Managed NAND 编程(Programming Managed NAND)
四、 NAND 的序列号(Serializing NAND)
五、 结论-I. Overview
1. NAND type flash memory
2. NAND flash memory framework
3. Non-full-page programming (Partial Page Programming)
4. From the NAND boot (Booting From NAND)
Second, NAND flash memory reliability problems
1. Bad block management (Bad Block Management, BBM)
2. Bad block management algorithm specification (BBM Algorithm Specification)
3.6 factory-programmed elements of bad block management (Six BBM Factory Programming Elements)
1) bad block replacement policy (Bad Block Replacement Strategy, BBR)
2) partition (Partitioning)
3) error-correcting code (Error Correction Codes, ECC)
4) the use of spare area (Spare Area Placement, SAP)
5) the format is not good use of the block (Free Good Block Formatting)
6) The dynamic metadata (Dynamic Metadata)
4. System Example
5. GM s factory-programmed bad block management program (Universal Factory Programming BBM Scheme)
6. Third-party and custom bad block management program (Third-party and Custom BB
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NAND闪存的工厂编程.pdf
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