资源列表
Reaction-of-network-Pgame-theory
- Reaction network game theory
超低功耗入耳检测+单按键触摸感应IC+滑动滑条触控轻触方案
- 近年来，TWS耳机市场快速发展，用户量井喷！随之而来的是，消费者对产品的功能要求也越来越高，普通的TWS耳机产品已经不足以满足消费者的需求，定制特殊化的产品，成为了厂商能否在TWS耳机市场的重要因素。永嘉微电科技专业定制触摸触控方案，也在这关键的时刻，为大家带来有意义的解决方案。 深圳市永嘉微电科技有限公司新出几款TWS蓝牙耳机触摸触控方案： 1：入耳检测触摸方案，替代原有光感+触摸，只需一颗触摸IC就可解决入耳检测，性能稳定，为用户节约成本，提高产品效益。以下是【苹果AirPods耳机】的
threelevel
- THIS SIMULATION CONTAINS AN THREE LEVEL NEUTRAL POINT CLAMPED INVERTER AND IT IS COMPARED WITH INVERTER WITH 150 DEGREES CONDUCTION MODE.
Difference-between-Router--Switch-a-Hub
- What is the difference between Router, Switch & Hub?
cti1
- 本文通过对市级电信企业面临的困境与机遇的思考，在客户概要管理的基础上强调了客户投诉管理的重要性。投诉调度流程完善协作级CRM的CTI呼叫中心地位，从而应对充分竞争环境的挑战，完善客户质量，提升服务响应速度与水平。-Based on municipal telecommunications enterprises are facing difficulties and opportunities of thinking, in summary management clients on the b
并行通信和串行通信介绍
- 并行通信和串行通信是CPU与外部设备之间进行信息交换的基本方法。采用并行通信时，构成一个字符或数据的各位同时传送，每一位都占用一条通信线，另外还需要联络以保证和外围设备协调地工作，它具有较高的传输速度。但由于在长线上驱动和接收信号较困难，驱动和接收电路较复杂，因此并行通信的传输距离受到限制，这种通信方式多用于计算机内部，或者作为计算机与近距离外围设备传输信息用。,Parallel and serial communication is communication between the CPU
CONVENOR-NCIE-2011
- reasearch and development in NICE 20-reasearch and development in NICE 2011
RfSupplier
- 国外部分无线射频技术厂商名录,包括行业应用系统与解决方案供应商、RFID组件供应商、智能卡技术供应商等等，入门必读！-Some foreign countries list of radio frequency technology vendors, including the industry applications and solutions, RFID component suppliers, supplier of smart card technology and so on, en
grewriting
- 新东方资深老师小宝谈gre中写作技巧注意事项-New Oriental Xiaobao senior teachers to talk about writing skills in gre Notes
consulting
- 华为IBM咨询,讲述华为管理的成功与IBM咨询服务人员。-IBM consulting for huawei
flying
- THIS SIMULATION CONTAINS AN THREE LEVEL CASCADED MULTILEVEL INVERTER AND IT IS COMPARED WITH INVERTER WITH 150 DEGREES CONDUCTION MODE.
PLASTIC_MEMORY
- Plastic memory is a low cost memory technology when compared to the present silicon memory technology. PEDOT material is used in the manufacturing of the plastic memory. It is one-time programmable memory. The disadvantage of this plastic memory is t