根据传热理论, 建立了大功率发光二极管的有限元模型. 选择了4 种键合材料( 高导热导电

银胶、纳米银焊膏, 大功率芯片键合胶、Sn70Pb30) , 4 种基板材料( Al2O3、A lN、A-l SiC、铜钼合金) .

采用ANSYS 有限元热分析软件进行了温度场仿真, 得到了大功率发光二极管封装材料的最优选

择. 研究了基板厚度、芯片输出功率及外接热沉时对发光二极管结温的影响.-Heat transfer theory, the finite element model of the high-power light-emitting diode. Choose four kinds of bonding material (high thermal conductive silver glue, nano-silver paste, high-power chip bonding glue Sn70Pb30) substrate material ( Al2O3, A lN, Al SiC, copper molybdenum alloy). temperature field simulation using ANSYS finite element thermal analysis software, the optimal choice of high-power light-emitting diode packaging materials. substrate thickness, chip output power and external heat Shen light-emitting diode junction temperature.