近年来, 利用尖端效应引起的场发射现

象, 在科学技术上实现了一系列新进展二如利

用场发射尖端作成了分辨率达到“埃” 级的场

离子显微镜( FIM )和扫描隧道显微镜(ST M ) ,

实现了显微技术的革新 又如利用薄膜场发

射阴极研制成功真空微电子器件, 它在集成

度、运算速度

、

功耗和可靠性上都远优于固体-In recent years, the field emission phenomenon caused by the use of cutting-edge effects, to achieve a series of new progress in science and technology such as the use of field emission tip into the resolution of " Aye"　level the field ion microscope (FIM) and scanning tunneling microscopy (ST M), microscopy innovations　Another example is the use of thin-film field emission cathode successful development of vacuum microelectronic devices, integration, operation speed, power consumption and reliability are much better than solid