for the first time, the impact of hotcarrier-induced gate capacitance variation on dynamic circuits

in a VLSI chip. To investigate the mismatch drift due to the

hot-carrier-induced gate capacitance variation, internal probing

was performed at room temperature using an electron-beam

prober before and after stre- for the first time, the impact of hotcarrier-induced gate capacitance variation on dynamic circuits

in a VLSI chip. To investigate the mismatch drift due to the

hot-carrier-induced gate capacitance variation, internal probing

was performed at room temperature using an electron-beam

prober before and after stress