该BTN8960TA是NovalithIC™ 系列包含在一个封装中三个独立的芯片组成部分：一个P沟道

高侧MOSFET和一个n沟道低侧MOSFET一起的驱动器IC，从而形成一个集成的高

当前半桥。所有的三个芯片安装在一个公共引线框架，使用由上芯片和芯片的芯片

芯片技术。电源开关采用垂直MOS技术，以确保最佳的导通电阻。

由于p沟道高侧切换需要一个电荷泵从而消除了最小的EMI。 界面

以微控制器是由容易被集成驱动器IC哪些功能逻辑电平输入，诊断

电流检测，转换率的调整，死区时间生成和防止过热，欠压，

过流和短路。的BTN8960TA可以与其它BTN8960TA结合，以形成H桥和3-

相驱动配置。-The BTN8960TA is part of the NovalithIC™　family containing three separate chips in one package: One p-channel

highside MOSFET and one n-channel lowside MOSFET together with a driver IC, forming an integrated high

current half-bridge. All three chips are mounted on one common lead frame, using the chip on chip and chip by

chip technology. The power switches utilize vertical MOS　technologies to ensure optimum on state resistance.

Due to the p-channel highside switch the need for a charge pump is eliminated thus minimizing EMI. Interfacing

to a microcontroller is made easy by the integrated driver IC which features logic　level inputs, diagnosis with

current sense, slew rate adjustment, dead time generation and protection against overtemperature, undervoltage,

overcurrent and short circuit. The BTN8960TA can be combined with other BTN8960TA to form H-bridge and 3-

phase drive configurations.