文件名称:Presentation1
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vertical-cavity surface-emitting laser (semiconductor laser device, diode laser)
Telecomunications, Pumping source
Wave length : infrared to visible
etched mesa VCSEL 980nm
Buried tunnel junction(BTJ) VCSEL 1300nm,1550nm
Material:
ALGaAs(GaAs),InGaAsP(InP)
Simulators are needed to explore the design parameter for an optimum solution—low cost and short time for a design cycle
-vertical-cavity surface-emitting laser (semiconductor laser device, diode laser)
Telecomunications, Pumping source
Wave length : infrared to visible
etched mesa VCSEL 980nm
Buried tunnel junction(BTJ) VCSEL 1300nm,1550nm
Material:
ALGaAs(GaAs),InGaAsP(InP)
Simulators are needed to explore the design parameter for an optimum solution—low cost and short time for a design cycle
Telecomunications, Pumping source
Wave length : infrared to visible
etched mesa VCSEL 980nm
Buried tunnel junction(BTJ) VCSEL 1300nm,1550nm
Material:
ALGaAs(GaAs),InGaAsP(InP)
Simulators are needed to explore the design parameter for an optimum solution—low cost and short time for a design cycle
-vertical-cavity surface-emitting laser (semiconductor laser device, diode laser)
Telecomunications, Pumping source
Wave length : infrared to visible
etched mesa VCSEL 980nm
Buried tunnel junction(BTJ) VCSEL 1300nm,1550nm
Material:
ALGaAs(GaAs),InGaAsP(InP)
Simulators are needed to explore the design parameter for an optimum solution—low cost and short time for a design cycle
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