MB85RC64了

FRAM（铁电随机存取记忆体）独立芯片配置了8192×8位，形成铁电工艺和硅栅CMOS工艺技术非易失性内存中的细胞。 MB85RC64采用两线串行接口（与世界标准的I2C总线兼容）。与SRAM不同的MB85RC64是无需使用数据备份电池，能够保留数据。 MB85RC64的读写次数10亿次，与EPROM和FLASH相比，有显著的改善。而且不在向写完存储器后，不需要查询序列。 -MB85RC64 out

FRAM (ferroelectric random access memory) chip is configured with 8192 × 8 bits, forming a ferroelectric process and a silicon gate CMOS process technology for nonvolatile memory cells. The MB85RC64 uses a two-wire serial interface (compatible with the world-standard I2C bus). Unlike the SRAM, the MB85RC64 does not require a data backup battery and can retain data. MB85RC64 read and write times 10 billion times, compared with the EPROM and FLASH, there is a significant improvement. And does not need to query the sequence after writing to memory.