1.1.课题任务要求及技术指标设计任务;
　若锗中含有一定数量的杂质元素Sb,试根据要求分析杂质浓度与电离度以及电离温度之间的关系:
　(I) 当Sb浓度分别为10"cm-和10"cm-时，计算杂质9%,90%和50%电离时的
温度各为多少?
　(2) 根据一定杂质类型和杂质浓度,画出电离度和温度的关系图线。并确定半导体处于强电离区(电离度>90%) 的温度范围。设计要求:
　(1) 具有友好输入输出界面:
　(2) 调整输入数据。得出相应结果。并进行分析。(1.1.Task requirements and technical specifications design task;If germanium contains a certain amount of impurity element SB, try to analyze the relationship between impurity concentration, ionization degree and ionization temperature according to the requirement.I) when SB concentration is 10 "cm- and 10" cm-, the ionization rate of impurity 990% and 50% is calculated.What's the temperature?2) drawing the relationship between ionization degree and temperature according to certain impurity type and impurity concentration.The temperature range of the semiconductor in the strong ionization region (ionization > 90) is determined.Design requirements:1) friendly I / O interface:Adjust the input data.The corresponding results are obtained.And the analysis is carried out.)