This asset originates from the tunneling injection being free

of the subthreshold slope limit that fundamentally blocks the

MOSFET [3]. Moreover, the limit of low ION in TFETs is

wearing off, as drive currents around 100 ìA/ìm have been

reported recently [4]–[8]. Despite a large interest in TFET performance,

little investigation has been done so far on the drain

voltage dependence of their electrical characteristics [9]–[12],

[18]. The main difference reported between the output ID(VD)

characteristics is the presence of superlinear regime in TFET

as opposed to ohmic regime for MOSFET [9]. The superlinear

regime, and more specifically, the onset it generates on the

output characteristics is already well understood [16], [17].

We report here for the first time an exponential dependence

of band-to-band tunneling (BtBT) current with drain voltage

on both measured and simulated TFET ID(VD) characteristics.