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This asset originates from the tunneling injection being free of the subthreshold slope limit that fundamentally blocks the MOSFET [3]. Moreover, the limit of low ION in TFETs is wearing off, as drive currents around 100 ìA/ìm have been reported rece
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0下载:
This asset originates from the tunneling injection being free
of the subthreshold slope limit that fundamentally blocks the
MOSFET [3]. Moreover, the limit of low ION in TFETs is
wearing off, as drive currents around 100 ìA/ìm have been
repor
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